pzt3906 transistor (pnp) features power dissipation p cm: 1 w (tamb=25 ) collector current i cm: -0.2 a collector-base voltage v (br)cbo: -40 v operating and storage j unction temperature range t j, t stg: -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic=-10a,i e =0 -40 v collector-emitter breakdown voltage v (br)ceo ic=-1ma,i b =0 -40 v emitter-base breakdown voltage v (br)ebo i e =-10a,i c =0 -5 v collector cut-off current i cbo v cb =-30v,i e =0 -0.05 a emitter cut-off current i ceo v ce =-30v,i b =0 -0.5 a h fe(1) v ce =-1v,i c =-0.1ma 60 h fe(2) v ce =-1v,i c =-1ma 80 h fe(3) v ce =-1v,i c =-10ma 100 300 h fe(4) v ce =-1v,i c =-50ma 60 dc current gain h fe(5) v ce =-1v,i c =-100ma 30 v ce(sat) i c =-10ma,i b =-1ma -0.25 v collector-emitter saturation voltage v ce(sat) i c =-50ma,i b =-5ma -0.4 v v be(sat) i c =-10ma,i b =-1ma -0.65 -0.85 v base-emitter saturation voltage v be(sat) i c =-50ma,i b =-5ma -0.95 v transition frequency f t v ce =-20v,i c =-10ma,f=100mhz 250 mhz collector output capacitance c ob v cb =-0.5v,i e =0,f=100khz 4.5 pf noise figure nf v ce =-5v,i c =-0.1ma, f=10hz to15.7khz,rg=1k ? 4 db delay time td 35 ns rise time tr v cc =-3.0vdc,v be =-0.5vdc i c =-10madc,i b1 =-1.0madc 35 ns storage time ts 225 ns fall time tf v cc =-3.0vdc,i c =-10madc i b1 =i b2 =-1.0madc 75 ns SOT-223 1. base 2. collector 3. emitter pzt3906 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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